发明名称 |
Phase change material layers and phase change memory devices including the same |
摘要 |
A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.
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申请公布号 |
US8017929(B2) |
申请公布日期 |
2011.09.13 |
申请号 |
US20080285449 |
申请日期 |
2008.10.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG YOUN-SEON;WAMWANGI DANIEL;WUTTIG MATTHIAS;KIM KI-JOON;KHANG YOON-HO;KIM CHEOL-KYU;SUH DONG-SEOK;LEE TAE-YON |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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