发明名称 |
Light-emitting diode apparatus and manufacturing method thereof |
摘要 |
A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
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申请公布号 |
US8017962(B2) |
申请公布日期 |
2011.09.13 |
申请号 |
US20080193271 |
申请日期 |
2008.08.18 |
申请人 |
DELTA ELECTRONICS, INC.;NATIONAL CENTRAL UNIVERSITY |
发明人 |
CHEN SHIH-PENG;CHAN CHIA-HUA;WANG HORNG-JOU;LIN CHING-LIANG;CHEN CHII-CHANG;LIU CHENG-YI;CHEN HUANG-KUN |
分类号 |
H01L33/60;H01L33/00;H01L33/22;H01L33/40;H01L33/44 |
主分类号 |
H01L33/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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