发明名称 |
Multi-level cell memory devices using trellis coded modulation and methods of storing data in and reading data from the memory devices |
摘要 |
A multi-level cell (MLC) memory device may include: a MLC memory cell; an outer encoder that encodes data using a first encoding scheme to generate an outer encoded bit stream; and a trellis coded modulation (TCM) modulator that applies a program pulse to the MLC memory cell to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream. A method of storing data in a MLC memory device, reading data from the MLC memory device, or storing data in and reading data from the MLC memory device may include: encoding data using a first encoding scheme to generate an outer encoded bit stream; and applying a program pulse to a MLC memory cell of the MLC memory device to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream.
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申请公布号 |
US8020081(B2) |
申请公布日期 |
2011.09.13 |
申请号 |
US20070802334 |
申请日期 |
2007.05.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KONG JUN JIN;PARK SUNG CHUNG;LEE YUN TAE;LEE YOUNG HWAN;HONG SI HOON;HYUN JAE WOONG;KANG DONG KU |
分类号 |
H03M13/03 |
主分类号 |
H03M13/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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