| 摘要 |
A memory control circuit has a write leveling function and controls read/write operations by supplying a clock signal to a plurality of memories through a clock signal line which is wired to the plurality of memories through daisy chain connection. For each of the plurality of memories, a first variable delay unit delays, in a write operation, a data strobe signal output to the memory by a first delay time that is set by utilizing the write leveling function and a second variable delay unit delays, in a read operation, a data signal input from the memory by a second delay time that is set based on the first delay time.
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