| 摘要 |
FIELD: electricity. ^ SUBSTANCE: in manufacturing method of semiconductor device, which involves processes of ion implantation and formation of active areas of instrument on silicon substrate, after formation of active areas there created is hidden p-layer under channel of instrument by alloying of substrate with Be ions with energy of 125-175 keV, dose of (2-5)1012 cm-2 and with further annealing at 650-750C during 20-30 minutes and H2 atmosphere. ^ EFFECT: reducing leakage current values in semiconductor devices, providing processibility, improving parameters, reliability and increasing percentage yield. |
