PROCESS FOR PRODUCTION OF NITRIDE SEMICONDUCTOR ELEMENT, NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LIGHT-EMITTING DEVICE

摘要

A process for producing a nitride semiconductor element (100), comprising the steps of forming an AlNO buffer layer (2) containing at least aluminum, nitrogen and oxygen on a substrate (1) and forming a nitride semiconductor layer (3, 4, 5, 6, 7, 8) on the AlNO buffer layer (2), wherein, in the step of forming the AlNO buffer layer (2), the AlNO buffer layer (2) is formed by a reactive sputtering method that employs aluminum as a target (26) in an atmosphere to which a nitrogen gas and an oxygen gas are introduced continuously and from which the gases are discharged continuously, and the ratio of the flow amount of the oxygen gas to the sum total of the flow amount of the nitrogen gas and the flow amount of the oxygen gas is 0.5% or less in the atmosphere.