METAL OXIDE THIN FILM, PREPARATION METHOD THEREOF, AND SOLUTION FOR METAL OXIDE THIN FILM

摘要

The present invention provides a solution for a metal oxide semiconductor thin film, comprising a metal hydroxide dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling the solubility of the metal hydroxide. In addition, a solution is synthesized for improving the stability of a device through the addition of other metal hydroxides and for additionally improving the semiconductor performance of a device through the addition of other metal hydroxides. The solution is coated on a substrate, and is annealed by using various annealing equipment so as to obtain a high-quality metal oxide thin film at a low temperature. The thin film is optically transparent, and thus can be applied to a thin film for various electronic devices, a solar cell, various sensors, a memory device, and the like.