CRYSTALLINE FILM, DEVICE, AND PRODUCTION METHODS FOR CRYSTALLINE FILM AND DEVICE

摘要

Disclosed are a crystalline film in which variations in the crystal axis following separation from a substrate for epitaxial growth have been resolved, and various devices in which the properties thereof have been improved by being provided with the crystalline film. Also disclosed are production methods for the crystalline film and the devices. A crystalline film with a thickness in the range of 300 µm to 10 mm is formed by means of epitaxial growth upon the surface of a single crystal substrate, which is the substrate for epitaxial growth, the crystalline film is thereafter separated from the single crystal substrate, the relative position in the thickness direction of the crystalline film where warping has occurred following separation is scanned by focusing a pulse laser in the interior of the crystalline film in the range of 3% to less than 50% in the thickness direction, on the assumption that the surface on the side curving in a concave shape is 0% and the surface curving in a convex shape is 100%, and a reforming region pattern is formed using multiphoton absorption from the pulse laser, thereby reducing or resolving the amount of warping of the crystalline film and reducing or resolving variations in the crystal axis angle.