A support section (30c) made from silicon carbide has undulations on at least a portion of the primary surface (F0) thereof. The support section (30c) and at least one monocrystalline substrate (11) are stacked in a manner so that the back surface (B1) of each of the at least one monocrystalline substrate (11) formed from silicon carbide makes contact with the primary surface (F0) of the support section (30c) that has undulations formed. In order to join the back surface (B1) of each of the at least one monocrystalline substrate (11) to the support section (30c), the support section (30c) and the at least one monocrystalline substrate (11) are heated in a manner such that the temperature of the support section (30c) exceeds the sublimation temperature of silicon carbide, and the temperature of each of the at least one monocrystalline substrate (11) is less than the temperature of the aforementioned support section (30c).
