STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES
摘要
First polysilicon (poly-1) is deposited into deep trenches that have been formed in a substrate. A first polysilicon polishing process is performed to planarize the exposed surfaces of the poly-1 so that the surfaces are flush with adjacent surfaces. Then, shallow trenches are formed in the substrate between the deep trenches, and second polysilicon (poly-2) is deposited into the shallow trenches. A second polysilicon polishing process is performed to planarize the exposed surface of the poly-2 so that the surface is flush with adjacent surfaces. Metal contacts to the poly-1 and the poly-2 are then formed.
申请公布号
WO2011109559(A2)
申请公布日期
2011.09.09
申请号
WO2011US26925
申请日期
2011.03.02
申请人
TERRILL, KYLE;BAI, YUMING;PATTANAYAK, DEVA N.;LUO, ZHIYUN
发明人
TERRILL, KYLE;BAI, YUMING;PATTANAYAK, DEVA N.;LUO, ZHIYUN