发明名称 |
SINGLE CRYSTAL SUBSTRATE, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND DEVICE PRODUCTION METHOD |
摘要 |
<p>In order to correct warping that occurs as a result of the formation of a multilayer film, a single crystal substrate is disclosed that has a heat denatured layer disposed within either a first region (10D) or a second region (10U), which are obtained by dividing the substrate into two equal parts in the thickness direction, and that is curved in a manner such that the surface of the region in which the heat denatured layer is provided forms a convex. Also disclosed are a production method therefor, a production method for a single crystal substrate with a multilayer film that uses said single crystal substrate, and a device production method using said production method.</p> |
申请公布号 |
WO2011108706(A1) |
申请公布日期 |
2011.09.09 |
申请号 |
WO2011JP55076 |
申请日期 |
2011.03.04 |
申请人 |
NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA;DISCO CORPORATION;AIDA, HIDEO;AOTA, NATSUKO;HOSHINO, HITOSHI;FURUTA, KENJI;HAMAMOTO, TOMOSABURO;HONJO, KEIJI |
发明人 |
AIDA, HIDEO;AOTA, NATSUKO;HOSHINO, HITOSHI;FURUTA, KENJI;HAMAMOTO, TOMOSABURO;HONJO, KEIJI |
分类号 |
H01L21/20;C30B29/20;C30B33/02;H01L21/268 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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