| 发明名称 |
MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY |
| 摘要 |
<p>In order to optimize the relationship between the drive current of a select transistor of a magnetic memory, and the magnetic inversion threshold current of a magnetoresistive effect element (101), the recording layer of the magnetoresistive effect element is provided with mechanisms (601 to 604) which apply a magnetic field inverse to that of a fixed layer, in order to reduce the magnetic inversion threshold current when writing "1".</p> |
| 申请公布号 |
WO2011108359(A1) |
申请公布日期 |
2011.09.09 |
| 申请号 |
WO2011JP53324 |
申请日期 |
2011.02.17 |
| 申请人 |
HITACHI, LTD.;TOHOKU UNIVERSITY;OHNO HIDEO;IKEDA SHOJI;MIURA KATSUYA;ONO KAZUO;TAKEMURA RIICHIRO;TAKAHASHI HIROMASA |
发明人 |
OHNO HIDEO;IKEDA SHOJI;MIURA KATSUYA;ONO KAZUO;TAKEMURA RIICHIRO;TAKAHASHI HIROMASA |
| 分类号 |
G11C11/15;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11C11/15 |
| 代理机构 |
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代理人 |
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| 地址 |
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