| 摘要 |
The disclosed method for producing an SOI wafer, wherein an SOI layer is formed on a buried insulator layer and that is suitable for photolithography conducted using exposure light of wavelength ?, is characterized by having at least a step for designing the thickness of the buried insulator layer of the aforementioned SOI wafer in accordance with the wavelength (?) of exposure light used in the aforementioned photolithography performed on the SOI wafer after production, and a step for fabricating the SOI wafer wherein an SOI layer is formed on the buried insulator layer of the aforementioned designed thickness. As a result, a method for producing and a method for designing an SOI waver are provided that, when performing photolithography, can restrain fluctuations in reflectance of exposure light that accompany fluctuations in SOI-layer thickness and can suppress fluctuations in the state of resist photosensitivity. |
