LOW DAMAGE PHOTORESIST STRIP METHOD FOR LOW-K DIELECTRICS

摘要

Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160 oCor less, e.g., less than about 90 oC.