发明名称 ALUMINUM OXIDE-ZINC OXIDE SPUTTERING TARGET
摘要 <p>Disclosed is an aluminum oxide-zinc oxide sputtering target characterized by containing at least one of Pb and Cd. The aluminum oxide-zinc oxide sputtering target has a high sintered density even if sintering temperature is low, for example on the order of 1300°C. Consequently, it is not necessary to sinter a starting material powder at a high temperature in order to obtain a high sintered density, and so the burden on the sintering furnace is low, and it is possible to avoid early degradation of the sintering furnace. Also, it is possible to suppress volatilization of zinc and other components from the starting material powder, and it is possible to easily form a film having a planned composition. Additionally, the sputtering target has a low specific resistance. Furthermore, the sputtering target has a low percentage of reduction in sputter rate.</p>
申请公布号 WO2011108536(A1) 申请公布日期 2011.09.09
申请号 WO2011JP54616 申请日期 2011.03.01
申请人 MITSUI MINING & SMELTING CO., LTD.;MIZOBUCHI, HIROAKI;YANO, TOMOYASU 发明人 MIZOBUCHI, HIROAKI;YANO, TOMOYASU
分类号 C23C14/34;C04B35/00;C04B35/453 主分类号 C23C14/34
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