METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

Provided is a method for producing a semiconductor device wherein it is possible to miniaturize by vertically forming a hole, to reduce the number of steps compared to those in the prior art, and to improve productivity. Specifically, provided is a method for producing a semiconductor device which involves: a hole forming step in which a hole is formed on a substrate; a polyimide film forming step in which a polyimide film is formed within the aforementioned hole; a plasma etching step in which the aforementioned substrate is subjected to anisotropic etching without using a mask to cover the polyimide film on the side wall section of the hole, and in which at least a portion of the polyimide film on the bottom section of the hole is removed and penetrated while retaining the polyimide film on the side wall section of the hole; and a conductive metal filling step in which a conductive metal is filled into the hole.