| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a diamond thin film capable of forming a high-quality diamond thin film by decreasing a crystal defect, an impurity, etc., existing in the diamond thin film. <P>SOLUTION: A diamond is annealed at stable high pressure which recovers and eliminates a lattice defect included in a crystal to improve the diamond crystal thin film in quality. Here, "stable (diamond)" or the following "(diamond) stably" indicates a state that a diamond keeps a diamond state without graphitization. A temperature T for annealing (also called as annealing temperature) and pressure P for annealing (also called as annealing pressure) are decided within an area where the diamond can be stably annealed. This area satisfies a formula of P>0.71+0.0027T or a formula of P=0.71+0.0027T shown in Fig.21, and also satisfies a formula of P≥1.5 GPa. The area is expressed by a slant line portion in Fig.21. <P>COPYRIGHT: (C)2011,JPO&INPIT |
