| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor layer in which the semiconductor layer is successively formed by reducing defects due to cracks, and to provide a method of manufacturing a photoelectric conversion device. <P>SOLUTION: The method of manufacturing the semiconductor layer includes the processes of: preparing a solution for semiconductor layer formation containing particulates including a chalcogen compound, a chalcogen element-containing organic compound, a Lewis base, and a metal element, and containing no chalcogen element or a chalcogen element by an amount less than a logical amount needed to make the metal element into the chalcogen compound semiconductor through chalcogenide processing in addition to the particulates and chalcogen element containing organic compound; forming a coating using the solution for semiconductor layer formation; and heat-treating the coating. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
