METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor single crystal which is in a bulk state and has high crystallinity by reducing a recessed portion that is caused during the growth.

SOLUTION: The method for producing a nitride semiconductor single crystal by a vapor phase growing method includes steps of: growing a first nitride semiconductor single crystal portion 2 on a seed substrate 1, the single crystal portion 2 having a major face and a recessed portion on the backside of an interface with the seed substrate 1; disposing a mask 4 in the recessed portion; and growing a second nitride semiconductor crystal portion on the first nitride semiconductor portion 2 so as to cover the mask 4.

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