THIN-FILM PHOTOELECTRIC CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a three-junction type thin-film photoelectric conversion device with high efficiency which has a high haze rate and in which short-circuit current values obtained by respective photoelectric conversion layers are equalized.

SOLUTION: The thin-film photoelectric conversion device 100 has a transparent electrode layer 2 and three silicon-based photoelectric conversion layers 91, 92 and 93 in order on a substrate 1. The transparent electrode layer 2 has at least one opening 5 formed through etching processing to expose a surface of the substrate 1, and the haze rate of the transparent electrode layer 2 to light in a wide wavelength range is equal to or larger than 60%.

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