| 摘要 |
PROBLEM TO BE SOLVED: To supply raw material gas of new type capable of preventing degradation of the quality of a thin film deposited on a substrate like the conventional apparatus when depositing a film by ALD (atomic layer deposition). SOLUTION: A thin film forming apparatus includes an evacuation vessel forming an evacuated film deposition space, and a raw material gas supply unit for supplying raw material gas to the film deposition space. The raw material gas supply unit includes a raw material gas pipe, a purge gas pipe, and a gas supply pipe for supplying raw material gas and purge gas to the film deposition space while the purge gas pipe, the raw material gas pipe and the purge gas pipe are connected to one another. First and second control valves are provided on the raw material gas pipe in the order closer from the connection part of the raw material gas pipe and the purge gas pipe. The raw material gas supply unit opens the second control valve, introduces raw material gas into the raw material gas pipe in an evacuated state between the first and second control valves, and supplies raw material gas into the film deposition space by performing the control to open the first control valve. COPYRIGHT: (C)2011,JPO&INPIT |
