| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element for suppressing an influence of a parasitic element and preventing an increase in an on voltage, and to provide a method of manufacturing the semiconductor element. SOLUTION: A p-type base region 2 is provided on a surface layer of an n<SP>-</SP>type drift region 1. A trench 3 penetrating the base region 2 and reaching the drift region 1 is provided on a front surface of a semiconductor substrate. A gate electrode 5 is provided within the trench 3 via a gate insulation film 4. A first recess 6 is selectively provided on a surface layer of the base region 2. Specifically, the surface of the base region 2 is in an irregular shape comprising a first recess 6 and a projection where the first recess 6 is not provided. The first recess 6 abuts on the trench 3. Also, a bottom face of the first recess 6 is provided deeper than the substrate surface as compared with an upper edge of the gate electrode 5. A source electrode 8 abuts on a projection of the base region 2 and is embedded into the first recess 6. COPYRIGHT: (C)2011,JPO&INPIT
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