发明名称 |
LOW POWER GRADED BASE SiGe HBT LIGHT MODULATOR |
摘要 |
A graded base silicon-germanium (SiGe) heterojunction bipolar transistor (HBT)-based electro-optical (EO) modulator includes a graded base HBT and a light beam directed under the graded base HBT and passing through the free carrier plasma within for the purpose of inducing a phase modulation of the light beam.
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申请公布号 |
US2011215344(A1) |
申请公布日期 |
2011.09.08 |
申请号 |
US201113040988 |
申请日期 |
2011.03.04 |
申请人 |
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发明人 |
DARDY HENRY D.;GUO JONG RU;MCDONALD JOHN F.;DARDY S. MARY ANN |
分类号 |
H01L31/153 |
主分类号 |
H01L31/153 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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