| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a precise processing method and a device of a hard-to-process material for high-efficiency generating a scratch-free and damage-free surface of high quality, by having the surface of the hard-to-process material made of a cemented carbide such as SiC, GaN or WC irradiated with high-density radicals generated with an atmospheric-pressure plasma to reform the mechanical properties of the surface to attain easy removal through mechanical polishing, such as, lapping or polishing. <P>SOLUTION: The method includes a surface reforming process of reforming the surface of the hard-to-process material by making a high-reactivity oxide species generated with the atmospheric-pressure plasma act on the surface to form a surface reformed layer on the hard-to-process material, and a polishing process of selectively removing the surface reformed layer, without introducing a scratch or an affected layer into the hard-to-process material and using a polishing mechanism higher in removing rate to the surface reformed layer than to the hard-to-process material to process the material, by alternately making it repeat or the surface reforming process and the polishing process proceed simultaneously. <P>COPYRIGHT: (C)2011,JPO&INPIT |
