| 发明名称 |
SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/-15 DEGREES IN THE C-DIRECTION |
| 摘要 |
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where−15<x<−1 and 1<x<15 degrees.
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| 申请公布号 |
US2011216795(A1) |
申请公布日期 |
2011.09.08 |
| 申请号 |
US201113041120 |
申请日期 |
2011.03.04 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
HSU PO SHAN;KELCHNER KATHRYN M.;FARRELL ROBERT M.;HAEGER DANIEL A.;OHTA HIROAKI;TYAGI ANURAG;NAKAMURA SHUJI;DENBAARS STEVEN P.;SPECK S. JAMES |
| 分类号 |
H01S5/343;H01L33/06;H01L33/18 |
主分类号 |
H01S5/343 |
| 代理机构 |
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