| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means which thins the thickness of a WCSP type semiconductor device having an electrode. <P>SOLUTION: In a semiconductor device which includes a semiconductor substrate 2, an electrode a pad 5 electrically connected to a circuit element formed on the front face of the semiconductor substrate, an interlayer insulating film 7 having a through-hole 8 which reaches the electrode pad, a metal underlayer 9 formed on the electrode pad and the interlayer insulating film including the through-hole, a wiring layer 10 formed on the metal underlayer which reaches an electrode forming region from the electrode pad, and a photosensitive seal film 12 which seals the front face side of the semiconductor substrate, the semiconductor device includes an interlayer insulating film projection 26 formed by projecting the metal underlayer side of the interlayer insulating film so that the electrode forming region 11 of the wiring layer is projected from the photosensitive seal film and an electrode 15 formed so as to cover a projection part of the wiring layer projected from the photosensitive seal film by the interlayer insulating film projection. <P>COPYRIGHT: (C)2011,JPO&INPIT |
