| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of in-plane film thickness distribution while avoiding a change in throughput and film quality in a film forming method using a vertical tube ALD (atomic layer deposition) device. SOLUTION: This method for manufacturing a semiconductor device includes a process for forming a film on each wafer by supplying DCS (dichlorosilane=SiH<SB>2</SB>Cl<SB>2</SB>) gas into a treatment chamber that holds a plurality of wafers in a state of being vertically aligned in horizontal attitudes in multiple stages through a first nozzle having a plurality of gas supply holes to correspond to the respective wafers. The position of each gas supply hole is arranged in a position corresponding to a part above a center position between the adjacent wafers to control wafer in-plane film thickness distribution so that a wafer center film thickness is thicker than a wafer peripheral part film thickness, or the position of the gas supply hole is arranged in a position corresponding to a part below the center position between the adjacent wafers to control the wafer in-plane film thickness distribution so that the wafer center film thickness is thinner than the wafer peripheral part film thickness. COPYRIGHT: (C)2011,JPO&INPIT
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