| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for generating a precursor for a semiconductor processing system (320). SOLUTION: This apparatus includes a canister (300) having sidewalls (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also a method of forming a barrier layer from purified pentakis(dimethylamido)tantalum, for example, a tantalum nitride barrier layer by atomic layer deposition is claimed. COPYRIGHT: (C)2011,JPO&INPIT |
