发明名称 Fabrication System and Manufacturing Method of Light Emitting Device
摘要 The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.
申请公布号 US2011217802(A1) 申请公布日期 2011.09.08
申请号 US201113108128 申请日期 2011.05.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KUWABARA HIDEAKI;MURAKAMI MASAKAZU
分类号 H01L33/36;C23C14/04;C23C14/12;C23C14/24;C23C14/50;C23C14/56;C23C16/04;H01L27/32;H01L51/56;H05B33/10;H05B33/14 主分类号 H01L33/36
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