| 摘要 |
PROBLEM TO BE SOLVED: To provide a bias circuit capable of achieving reduction of temperature dependence, reduction of power voltage dependency, sufficient attenuation of noise superposed on a power voltage and a negative voltage and improvement of the degree of freedom in selection of a manufacturing process; and to provide an LNA, an LNB, a receiver for communication, a transmitter for communication, and a sensor system. SOLUTION: The HEMT bias circuit 11 for an HEMT 1 having a source terminal 4 grounded includes: a double-power type operational amplifier AMP1; a resistive element RI; a first reference voltage source VX; and a second reference voltage source VY, wherein a positive input terminal, a negative input terminal and an output terminal of the operational amplifier AMP1 are connected to a drain terminal 3 of the HEMT 1, the second reference voltage source VY and a gate terminal of the HEMT 1, respectively. One-side terminal and the other-side terminal of the resistive element RI are connected to the drain terminal 3 of the HEMT 1 and the first reference voltage source VX, respectively. COPYRIGHT: (C)2011,JPO&INPIT
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