| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device which is fine and easy to manufacture, and a manufacturing method therefor. SOLUTION: A hard mask material film is formed on a semiconductor substrate 2 and a recess part 2c is formed immediately below an opening part in an upper surface 2a of the semiconductor substrate 2. Thereafter, a p-type region 4 is formed immediately below the recess part 2c by implanting an impurity to an imaging region A by using the hard mask material film as a mask. A trench 14 is formed by further processing the recess part 2c in a processing region B. A semi-buried insulation film 5 and an STI7 are formed by burying an insulating material inside the recess part 2c and the trench 14, and the hard mask material film is removed. Then, electrodes 8a, 8b are formed so as to get on the semi-buried insulation film 5 and the STI7, respectively, and the impurity is implanted to the imaging region A by using the electrode 8a and the semi-buried insulation film 5 as a mask, thus forming an n-type region 3 constituting a photodiode in a region in contact with the p-type region 4 in the semiconductor substrate 2. COPYRIGHT: (C)2011,JPO&INPIT
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