| 摘要 |
PROBLEM TO BE SOLVED: To reduce a manufacturing cost of a zapping element while reducing a breakdown voltage of the zapping element. SOLUTION: The width of a gate electrode 14 of the zapping element 100 is processed to be partially narrow. That is, the gate electrode 14 includes a first gate electrode 14N having a small first gate width W1 at the center, and second gate electrodes 14W with large second gate widths W2 at both sides. The first channel length LC1 of a channel region CH corresponding to the first gate electrode 14N is thereby shorter than a second channel length LC2 of a channel region CH corresponding to the second gate electrode 14W. COPYRIGHT: (C)2011,JPO&INPIT
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