THIN FILM TRANSISTOR STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-performance thin film transistor structure which is easily manufactured.

SOLUTION: A sub stack body 6 is formed, in a position where gate electrode wiring 3 and source electrode wiring 8 overlap, between them. The sub stack body 6 including: an insulating layer 5X which is arranged adjacent to a gate insulating layer 4; and a semiconductor layer 5Y which is not arranged adjacently, is disposed on the gate insulating layer 4 in the same process as that of a main stack body 5 of a TFT 11. The insulating layer 5X and the semiconductor layer 5Y are obtained by the phase separation of a film which is formed by using a solution containing an insulating material and a semiconductor material.

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