发明名称 ATMOSPHERIC PLASMA APPARATUS
摘要 An atmospheric plasma apparatus for depositing a layer on a continuous base film transported in its longitudinal direction includes an electrode for treatment provided opposite to the peripheral surface of a drum electrode and upstream of an electrode for deposition in the direction of transportation of the base film, an electric power source for treatment which applies voltages to the electrode for treatment, and a reactive gas-feeding element for feeding a reactive gas for surface treatment between the drum electrode and the electrode for treatment. The atmospheric plasma apparatus as such is capable of depositing a layer without impairing effects of surface treatment, allowing a higher adhesion between the base film and the layer deposited thereon and, consequently, an efficient, successive deposition of a high-quality layer.
申请公布号 US2011214609(A1) 申请公布日期 2011.09.08
申请号 US201113038066 申请日期 2011.03.01
申请人 FUJIFILM CORPORATION 发明人 TAKAHASHI HISASHI
分类号 C23C16/54;C23C16/448 主分类号 C23C16/54
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