发明名称 |
Semiconductor integrated circuit device with reduced leakage current |
摘要 |
The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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申请公布号 |
US2011215414(A1) |
申请公布日期 |
2011.09.08 |
申请号 |
US201113067177 |
申请日期 |
2011.05.13 |
申请人 |
RENESAS ELECTRONICS CORPORATION;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
OSADA KENICHI;ISHIBASHI KOICHIRO;SAITOH YOSHIKAZU;NISHIDA AKIO;NAKAMICHI MASARU;KITAI NAOKI |
分类号 |
G11C11/413;H01L27/092;G11C11/41;G11C11/412;H01L21/8234;H01L21/8238;H01L21/8244;H01L27/088;H01L27/10;H01L27/11;H03K19/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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