发明名称 |
SYSTEM AND METHOD FOR MANUFACTURING DOUBLE EPI N-TYPE LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR TRANSISTORS |
摘要 |
A system and a method are disclosed for manufacturing double epitaxial layer N-type lateral diffusion metal oxide semiconductor transistors. In one embodiment two N-type buried layers are used to minimize the operation of a parasitic PNP bipolar transistor. The use of two N-type buried layers increases the base width of the parasitic PNP bipolar transistor without significantly decreasing the peak doping profiles in the two N-type buried layers. In one embodiment two N-type buried layers and one P-type buried layer are used to form a protection NPN bipolar transistor that minimizes the operation of parasitic NPN bipolar transistor. The N-type lateral diffusion metal oxide semiconductor transistors of the invention are useful in inductive full load or half bridge converter circuits that drive very high current.
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申请公布号 |
US2011215373(A1) |
申请公布日期 |
2011.09.08 |
申请号 |
US201113108709 |
申请日期 |
2011.05.16 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
KWON TAEHUN |
分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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