| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of times of heat treatment of a bond substrate in reprocessing treatment in a method for manufacturing an SOI substrate. SOLUTION: An insulating layer is formed over a surface of a semiconductor wafer to be the bond substrate and irradiation with accelerated ions is performed so that an embrittlement region is formed inside the wafer. Next, this semiconductor wafer and a base substrate such as a glass substrate or a semiconductor wafer are attached to each other. Then, the semiconductor wafer is divided at the embrittlement region by heat treatment, whereby an SOI substrate is manufactured in which a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween. Before this SOI substrate is manufactured, heat treatment is performed on the semiconductor wafer at 1,100°C or higher under a non-oxidizing atmosphere such as an argon gas atmosphere or a mixed atmosphere of an oxygen gas and a nitrogen gas. By performing this heat treatment, heat treatment at a high temperature of 1,100°C or higher is not necessarily performed every time reprocessing treatment is performed. COPYRIGHT: (C)2011,JPO&INPIT |
