发明名称 |
TECHNIQUES FOR READING FROM AND/OR WRITING TO A SEMICONDUCTOR MEMORY DEVICE |
摘要 |
Techniques for reading from and/or writing to a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first memory cell array having a first plurality of memory cells arranged in a matrix of rows and columns and a second memory cell array having a second plurality of memory cells arranged in a matrix of row and columns. The apparatus may also include a data sense amplifier latch circuitry having a first input node and a second input node. The apparatus may further include a first bit line input circuitry configured to couple the first memory cell array to the first input node of the data sense amplifier latch circuitry and a second bit line input circuitry configured to couple the second memory cell array to the second input node of the data sense amplifier latch circuitry.
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申请公布号 |
US2011216608(A1) |
申请公布日期 |
2011.09.08 |
申请号 |
US20100718310 |
申请日期 |
2010.03.05 |
申请人 |
INNOVATIVE SILICON ISI SA |
发明人 |
HOLD BETINA;MURRAY ROBERT |
分类号 |
G11C7/00;G11C7/10 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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