SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent cracks from reaching to an element forming region on the occurrence of the cracks in an SOG film in a trench forming a process mark, an alignment mark or the like.

SOLUTION: The process mark 30C is formed by the pattern of the trenches 31 on the outside of the element forming region 10T of a semiconductor substrate 10. The element forming region 10T and the trenches 31 on the outside thereof are coated with an interlayer dielectric 21. The interlayer dielectric 21 is coated with the SOG films 22 embedding the insides of the trenches 31. An annular polysilicon film 18 surrounding the trenches 31 and the SOG films 22 on the trenches 31 is formed on the surface of the semiconductor substrate 10.

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