| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide, for example, an optical conversion device wherein the selection range for a material of a layer including quantum dots is widened. <P>SOLUTION: An optical conversion device of one embodiment includes a first conductivity-type substrate (p-type single crystalline silicon substrate 100); a first intermediate layer (i-type semiconductor layer 110 or a dielectric layer 160); and a second conductivity-type semiconductor layer (n-type semiconductor layer 120). The first intermediate layer (i-type semiconductor layer 110 or dielectric layer 160) includes quantum dots (nanoparticles) having at least cores. The first conductivity-type substrate is formed of a crystalline semiconductor, such as, single crystalline silicon. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
