| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem with a power module having a semiconductor switching element, wherein the module is arranged with a heat sink for dissipating heat which is generated by a switching operation, however, a leakage current due to a stray capacitance between the heat sink and the power module is increased alone with an increase of a carrier frequency to the switching element. <P>SOLUTION: The wide-gap semiconductor switching element is used for the power module, the thickness of a heat dissipation sheet installed between the heat sink and the power module is made thicker than that of a heat dissipation sheet which has been used in a conventional Si-switching element, thus suppressing the leakage current. <P>COPYRIGHT: (C)2011,JPO&INPIT |
