| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a crystal growth method for growing a uniform crystal on a substrate having unevenness. <P>SOLUTION: The crystal growth method is to grow up the crystal of nitride semiconductor on a principal plane of the substrate having the principal plane in which the unevenness is prepared. A buffer layer including Ga<SB>x</SB>Al<SB>1-x</SB>N (0.1≤x<0.5) and having thickness of 20 nm or more and 50 nm or less is deposited on the principal plane at speed of 0.1 μm/h or less. The crystal including the nitride semiconductor is grown up on the buffer layer at a temperature higher than that of the substrate in deposition of the buffer layer. A deposition rate Rt of the buffer layer and average thickness T of the buffer layer are managed appropriately. Thus, sufficient flatness of surface morphology of the nitride semiconductor crystal formed on the buffer layer is realized and the number Np of generated pits being crystal defects can be made very small. <P>COPYRIGHT: (C)2011,JPO&INPIT |
