| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device, along with a method of manufacturing the same, having high power and low forward direction voltage, and capable of being manufactured without greatly increasing the manufacturing cost. <P>SOLUTION: The light emitting device 1 includes a semiconductor substrate 10, a light emitting part 20, a reflecting part 210, a current dispersion layer 240, a front face electrode 30 and a back electrode 35. The reflecting part 210 is formed with a plurality of pair layers, and a second current dispersion layer 244 has carrier concentration or impurity concentration higher than the carrier concentration or impurity concentration of a first current dispersion layer 242, and has a rugged part 250 on the front face. The front face electrode 30 has a plurality of front face electrode layers, and the front face electrode layer abutting on the second current dispersion layer 244 out of the plurality of front face electrode layers has a thickness of ≥100 nm and ≤600 nm. <P>COPYRIGHT: (C)2011,JPO&INPIT |
