| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device increased in a luminous efficiency, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor light emitting device includes an n-type semiconductor layer 20 containing a nitride semiconductor, a p-type semiconductor layer 50 containing a nitride semiconductor, a plurality of barrier layers 41 disposed between the n-type and p-type semiconductor layers and containing a nitride semiconductor, and a well layer 42 disposed among the plurality of barrier layers, having a band gap energy smaller than a band gap energy of the barrier layer, and containing InGaN. At least any of the plurality of barrier layers includes a first layer BL1, a second layer BL2 disposed closer to the p-type semiconductor layer than the first layer, and a third layer BL3 disposed closer to the p-type semiconductor layer than the second layer. The second layer contains Al<SB>x</SB>Ga<SB>1-x</SB>N (0≤x≤0.05) and is larger in band gap energy than the first and third layers. The total thickness of the first and second layers is less than the thickness of the third layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
