SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of suppressing variations in impurity distribution of a gate electrode of effectively controlling the electric field concentration to an STI (shallow trench isolation) edge portion, and of suppressing that an effective channel width becomes narrow, and to provide a method of manufacturing the device. SOLUTION: An element isolation region 25, having a trench 22 and an insulator 24 and an element region 12 surrounded by the element isolation region 25 and where a side-surface upper part 17 of a silicon substrate 10 that forms the element region 12 exposed to the trench 25, are formed on one main surface 11 of the P-type silicon substrate 10. A gate insulating film 40 is formed so as to extend from an upper surface 14 of the silicon substrate 10 to the side-surface upper portion 17. A gate electrode 30, having an N+-type polysilicon 32, P+-type polysilicons 34 provided on both sides of the N+-type polysilicon 32, and N+-type polysilicons 36 provided along the side-surface upper portion 17 on the lower side of the P+-type polysilicons 34, is formed. COPYRIGHT: (C)2011,JPO&INPIT