发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p+-type isolation layer. A p-type region is provided and is electrically connected to the p+-type isolation layer. The p+-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.
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申请公布号 |
US2011215435(A1) |
申请公布日期 |
2011.09.08 |
申请号 |
US201113038349 |
申请日期 |
2011.03.01 |
申请人 |
FUJI ELECTRIC HOLDINGS CO., LTD. |
发明人 |
WAKIMOTO HIROKI;IGUCHI KENICHI;YOSHIKAWA KOH;NAKAJIMA TSUNEHIRO;TANAKA SHUNSUKE;OGINO MASAAKI |
分类号 |
H01L29/06;H01L21/302;H01L21/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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