发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To achieve a plasma processing apparatus for achieving circularly polarized wave processing of microwaves to wide plasma processing conditions and obtaining plasma processing characteristics having improved axisymmetry, and to provide a processing method in the plasma processing apparatus using microwaves. <P>SOLUTION: For enhancing axisymmetry of plasma processing using a circularly polarized wave generator for conducting a circularly polarized wave processing of microwaves regardless of reflection waves, stubs 403, 404 are provided at a side of a circular waveguide 405 in a circle/rectangle converter 402 and the stubs 403, 404 are made cylindrical and the tip is made semicircular. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011176146(A) 申请公布日期 2011.09.08
申请号 JP20100039379 申请日期 2010.02.24
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TAMURA HITOSHI
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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