发明名称 SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sputtering apparatus which can form a thin film superior in uniformity and reproducibility. SOLUTION: The sputtering apparatus includes: a sputtering chamber 1 formed of a vacuum chamber; a tray transportation mechanism which moves in a state of holding a substrate 7 in the sputtering chamber 1; a sputtering cathode which fixes targets 8 and 9 thereon for forming a thin film on the substrate 7, generates plasma, and makes the targets 8 and 9 generate sputtered particles; and a film thickness correction plate 19 which is arranged between the substrate 7 and the targets 8 and 9. The film thickness correction plate 19 has a body part 19a which has an anode potential, and a frame part 19b which holds the body part 19a. The frame part 19b holds the body part 19a so that the body part 19a is arranged almost in the center of the traveling direction of a tray in a region in which the sputtered particles have been generated, and in the vicinity of the substrate 7 passing through the region in which the sputtered particles have been generated. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011174148(A) 申请公布日期 2011.09.08
申请号 JP20100040051 申请日期 2010.02.25
申请人 SHOWA SHINKU:KK 发明人 YABE YUTAKA
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
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