| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor capable of increasing capacitance density, simplifying a manufacturing process, improving high frequency characteristics, and improving the versatility of a dielectric material without requiring pattern formation on a nano scale, and a method of manufacturing the same. SOLUTION: A capacitor element 12 includes a dielectric layer 18 utilizing a porous oxide base material obtained by anodizing a metal, a plurality of first internal electrodes 20 and second internal electrodes 22 formed in pores, a first external electrode 24 connected with the first internal electrode 20, and a second external electrode 32 connected with the second internal electrode 22. By a structure where the first external electrode 24 and the second external electrode 32 are formed almost in parallel at the same main surface side of the dielectric layer 18 via an insulating layer 28, the capacitance density can be increased, the manufacturing process can be simplified, and ESL (equivalent series inductance) can be reduced. In addition, the selection of the dielectric material conforming to the application of the element becomes possible by selectively removing the dielectric layer 18 and charging the other dielectric material. COPYRIGHT: (C)2011,JPO&INPIT |
