发明名称 |
THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode overlapped with a first end of the semiconductor pattern and a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode. The semiconductor pattern includes an amorphous multi-elements compound including a II B element and a VI A element or including a III A element and a V A element and having an electron mobility no less than 1.0 cm2/Vs and an amorphous phase, wherein the VI A element excludes oxygen. Thus, a driving characteristic of the thin film transistor may be improved.
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申请公布号 |
US2011215322(A1) |
申请公布日期 |
2011.09.08 |
申请号 |
US201113035054 |
申请日期 |
2011.02.25 |
申请人 |
PARK JAE-WOO;LEE JE-HUN;YEON SEONG-JIN;KIM YEON-HONG |
发明人 |
PARK JAE-WOO;LEE JE-HUN;YEON SEONG-JIN;KIM YEON-HONG |
分类号 |
H01L29/786;H01L21/336;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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